High pressure differential thermal analysis (DTA) and crystal growth of α‐HgS

AIP Conference Proceedings(2008)

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摘要
Differential Thermal Analysis (DTA) of HgS was performed in high pressure gas apparatus up to 21 kbar and temperatures up to 1000 °C. The zinc blende–cinnabar, cinnabar–liquid, and zinc blende–liquid coordinates are: p=16.6 kbar and T=890 °C. For the first time α‐HgS (cinnabar) was crystallized from the melt. The obtained ingots (size 4×5×30 mm) consisted of few single crystal grains. Good crystal quality was confirmed by X‐ray analysis.
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关键词
high pressure,zinc,single crystal,crystal growth,crystal structure,differential thermal analysis
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