High Quality Passive Devices Fabricated Inexpensively In Advanced Rf-Cmos Technologies With Copper Beol
2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS(2007)
摘要
High quality factor inductors and highly matched low capacitance density horizontal parallel plate metal-insulator-metal capacitors were fabricated in 130nm RF-CMOS technology with minimal or zero processing step addition. The high quality factor inductors were made using a novel triple damascene integration technique. Peak quality factor of 26 was demonstrated for a 0.3nH inductor. The low capacitance density MUM capacitors were fabricated using standard BEOL copper planes with zero addition of processing steps. Capacitance density value of 0.66 fF/um(2) was achieved for a six level copper wiring BEOL Impact of copper plane cheesing was characterized to ensure optimal manufacturing production.
更多查看译文
关键词
capacitors, CuBEOL, inductors, passive devices, RF-CMOS
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要