Spatial temporal simulation of active optoelectronic and plasmonic devices using a multi-level multi-electron FDTD model

We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a multi-level multi-electron (MLME) system. We show how this MLME-FDTD model can be used for spatial-temporal simulation of a wide range of active optoelectronic and plasmonic devices. Realistic simulations ranging from semiconductor lasers, to plasmonic lasers, and semiconductor optical amplifiers are illustrated.