Effect Of Argon Gas Flow Rate On Properties Of Film Electrodes Prepared By Thermal Vacuum Evaporation From Synthesized Cu2snse3 Source

This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (V-A = 25 cm(3)/min). Higher value of photoresponse was observed for films deposited under V-A = 25 cm(3)/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.