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Simulation of plasma immersion ion implantation into silicon

Alexander N Burenkov,Juergen Lorenz,Yohann Spiegel,Frank Torregrosa

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2015）

Cited 5|Views35
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Abstract
A numerically efficient model for the simulation of ion implantation doping profiles in silicon after pulsed plasma immersion ion implantation is suggested. The model is based on an analytical formula for the energy distribution of the ions extracted from the plasma and on the application of this energy distribution in a Monte-Carlo simulator for conventional ion implantation. The model is verified using examples of BF 3 and AsH 3 plasmas for p-type and n-type doping in silicon, respectively.
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Key words
plasma immersion ion implantation,BF3 plasma,AsH3 plasma,silicon
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