Iii-Nitride Semiconductors For Intersubband Devices

Y Kotsar,H Machhadani,Samer Sakr,P K Kandaswamy,M Tchernycheva,E Belletamalric,F H Julien,E Monroy

QUANTUM SENSING AND NANOPHOTONIC DEVICES VIII（2011）

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摘要

Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar AlGaN/GaN heterostructures for this relevant spectral range.

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关键词

Nitrides, intersubband, infrared, quantum well, superlattices

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