On-wafer wideband characterization: a powerful tool for improving the IC technologies
Journal of Telecommunications and Information Technology（2023）
摘要
In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.
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关键词
silicon-on-insulator,MOSFET,wideband characterization,microwave frequency,extraction techniques,smallsignal equivalent circuit
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