NFET effective work function improvement via stress memorization technique in replacement metal gate technology

Y. Liu,H. V. Meer,Oleg Gluschenkov, X. Yang,F. Sato, Kyung-hwan Cho, Michael Ganz,Henry K. Utomo, Y. Wang,Unoh Kwon,H. Kothari,W. Mcmahon,Suresh Uppal,M. Jin,C. Tian,W. Lai,Ravikumar Ramachandran, Emmanuel Josse, Sameer H. Jain,Vijay Narayanan,Manfred Eller,Srikanth Samavedam,H. Shang,R. Divakaruni

symposium on vlsi technology（2013）

引用 23|浏览63

暂无评分

摘要

In this paper, for the first time we investigate and report the effective workfunction (eWF) modulation arising from stress memorization technique (SMT) in advanced replacement metal gate (RMG) CMOS technology. Our SMT data show a strong improvement in NFET short channel effect (SCE) besides a typical strain-induced mobility enhancement, suggesting better eWF. Further investigation proves that the eWF improvement is due to the electron affinity increase at silicon conduction band caused by the uniaxial channel strain from SMT. The impact of the electron affinity change on device performance and reliability has been evaluated.

查看译文

关键词

metals,field effect transistors,electron affinity,logic gates,cmos technology,stress,electric potential,silicon,cmos integrated circuits

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要