Integrated modeling platform for High-k/alternate channel material heterostructure stacks

To study the High-k dielectrics on alternate semiconductor materials for transistors a modeling platform has been developed which implements a faster 1D Schrodinger-Poisson along with trap models. A fitting algorithm is used for the extraction of trap profiles which fits the model capacitance/admittance to the measurements in the least square sense. The extraction is illustrated on a subnanometer EOT HfO ₂ /SiGe/Si heterostructure stack.