Design And Optimization Of A W-Band Extended Interaction Klystron Amplifier

A three dimension high frequency circuit of an W band extended interaction klystron amplifier (EIA) is designed. With an electron beam of 17 kV and 0.34 A, and an input microwave power of 30 mW at 94.77 GHz, an average power of 580 W with power conversion efficiency of 10.03%, gain of 42.6 dB, 3dB Instantaneous bandwidth of more than 150 MHz is obtained. However, a peak output power of 50 mW is obtained by experiment. Based on the experiment result, optical system and RF circuit are optimized. Via optimization, a beam transmission of 100% is achieved, and with an electron beam of 18 kV and 0.28 A, and an input microwave power of 30 mW at 94.95 GHz, an average power of 374 W is obtained.