A New Technique For Characterizing Very Low Frequency Noise Of Bipolar Junction Transistors
2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM)(2011)
摘要
Using time sampled DC measurements from standard bench-top semiconductor parameter analyzers, it proves possible to characterize low frequency noise of BJT's down to sub-mHz frequencies. The new technique is exemplified using SiGeC HBT's. Base current random telegraph noise with time constants of as long as tens of seconds is demonstrated.
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关键词
Low-frequency noise, 1/f noise, measurement method, Silicon bipolar/BiCMOS process technology, device physics
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