Progress and Challenges of GaN-based Microwave HEMTs, Amplifiers and Novel Spin

SJ Pearton,F Ren,BP Gila,CR Abernathy,AP Zhang,N Moser,RC Fitch,JK Gillespie,T Jenkins,J Sewell,D Via,A Crespo

EDMO2003 11TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS（2003）

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摘要

AlGaN/GaN high electron mobility transistors are extremely promising for microwave power generation from S band up to Ka band. The list of potential applications includes commercial wireless base stations, phased array radar, satellite-based communication systems, digital radio and power flow control. Results to date show excellent power performance, with densities>10W.mm-1 and high efficiency. In this paper we give a brief overview of the field, report on use of single-crystal oxide layers to provide effective surface passivation for HEMTs and then discuss some new spin-based GaN devices that may have a role in expanding the functionality of nitride electronics and photonics.

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关键词

III-V semiconductors,amplifiers,digital radio,gallium compounds,high electron mobility transistors,microwave devices,microwave field effect transistors,microwave photonics,microwave power transistors,mobile radio,nitrogen compounds,passivation,satellite communication,telecommunication terminals,voltage control,wide band gap semiconductors,AlGaN,GaN,Ka band,S band,amplifiers,commercial wireless base stations,digital radio,high electron mobility transistors,microwave HEMTs,microwave power generation,new spin-based GaN devices,nitride electronics,phased array radar,photonics,power flow control,power performance,satellite-based communication systems,single-crystal oxide layers

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