Impact of technology and voltage scaling on LEON3 processor performance and energy

Xue Lin,Alireza Shafaei,Shuang Chen,Tiansong Cui,Massoud Pedram

2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)（2015）

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摘要

Highly optimized FinFET devices are necessary for enabling aggressive voltage scaling, and hence improving the energy efficiency in advanced technology nodes. On the other hand, near-threshold operation is still a useful solution for energy minimization in FinFET-based circuits.

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关键词

LEON3 processor performance,FinFET devices,voltage scaling,energy efficiency,advanced technology nodes,near-threshold operation,energy minimization,technology scaling

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