Nickel suicide for interconnects

Kevin L Lin,Stephanie A Bojarski,Colin T Carver,Manish Chandhok,Jasmeet S Chawla,James S Clarke,M Harmes,Brian Krist, Hazel Lang,Mona Mayeh,Sudipto Naskar,John J Plombon,Seung Hoon Sung,Hui Jae Yoo

international interconnect technology conference（2015）

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摘要

Nickel suicide is an attractive option for interconnects at small dimensions because of its short electron mean free path and good electromigration behavior. Nickel suicide interconnects can be integrated using either a subtractive or damascene process. Precise control of final metal composition ratio is important for obtaining low resistivity, as shown in thin-film and patterned structure measurements.

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关键词

conductivity,nickel,microelectronics,yttrium,thermal stability

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