Interface Diffusion in Polysynthetically-Twinned Tiai

The utility of polysynthetically-twinned (PST) TiAI, which contains a high density of parallel, atomically-flat interfaces within a set of identical crystallographic orientations, as a potential model system for a detailed investigation of interface diffusion is explored. Macroscopic PST crystals were grown in an optical float zone furnace. Thin films were cut from oriented crystals and polished with <112> directions normal to the film. After sputter cleaning, Ag was deposited on one side of the TiAI thin films. Auger spectra were obtained from these films over a wide range of sputter/anneal conditions. The Al and Ti concentrations were analyzed as well as the important impurity elements, S, Ar, C, N and O. Using the present data and existing knowledge of the microstructure and crystallography of PST TiAI, the potential of this material for providing a detailed understanding of the atomistic mechanisms of interface diffusion is analyzed.