Low-Cost, Large Area Silicon Detectors for Calorimetry

Trapezoidal detectors with 28 cm{sup 2} active area have been fabricated on >2500 {Omega}cm, 4 in. diameter n-type silicon wafers. Instead of the commonly used ion implantation method, low-cost, high volume solid state diffusion technology along with phosphosilicate-glass and TCA gettering was adopted for boron and phosphorus doping. Typically the diode dark current was 15 {mu}A {at} 100 volts. Efforts are being made to obtain a finished device yield of 80% to meet the $2/cm{sup 2} price goal of SSC semiconductor detector group. 20 refs., 4 figs.