Lanthanide And Ir-Based Dual Metal-Gate/Hfalon Cmos With Large Work-Function Difference

Metallic diffusion through high-K HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phi(m,eff)) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual phi(m,eff) of 4.15 and 4.9 eV are also obtained in YbxSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.