RADIATIVE RECOMBINATION AND GAIN IN InGaN/GaN QUANTUM WELLS WITH In-RICH NANOCLUSTERS

Y Dikme,B Schineller,G P Yablonskii,A L Gurskii,V N Pavlovskii,Evgenii V Lutsenko,A V Danilchyk,R H Jansen,H Kalisch,J F Woitok,M Heuken, M Luenenbuerger,V Z Zubialevich

PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES（2007）

引用 1|浏览6

暂无评分

摘要

Peculiarities of temperature and excitation intensity dependencies of radiative recombination of InGaN/GaN multiple quantum well (MQW) heterostructures grown on silicon were analysed to determine the participation of carriers localized in In-rich nanosized clusters in spontaneous emission, gain and lasing. X-ray diffraction measurements were carried out to characterize the structure of MQWs.

查看译文

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要