Metallization Of Sub-30 Nm Interconnects: Comparison Of Different Liner/Seed Combinations

Laureen Carbonell,Henny Volders,Nancy Heylen,Kristof Kellens, Rudy Caluwaerts, Katia Devriendt,Efrain Altamirano Sanchez, Johan Wouters,Virginie Gravey,Kavita Shah,Qian Luo, Arvind Sundarrajan,Jiang Lu, Joseph Aubuchon, Paul Ma,Murali Narasimhan,Andrew Cockburn,Zsolt Tokei, Gerald P. Beyer

PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE（2009）

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摘要

Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta, RuTa, TaN + Co and MnOx metallization schemes. So far, the RuTa metallization scheme has proved to be the most promising candidate to achieve a successful metallization of 25 nm interconnects, providing high electrical yields and a good compatibility with the slurries used during CMP.

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关键词

geometry,corrosion,annealing,manufacturing,chemical mechanical polishing,cobalt,organic materials,etching,slurries,metallization,metals,materials,tantalum,scalability,critical dimension,lithography,copper

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