Anomalous Low Temperature Charge Leakage Mechanism In Ulsi Flash Memories

We present a systematic study of an anomalous charge leakage phenomenon in Flash memories which occurs at temperatures below 150C. Essential characteristics of the leakage are described in association with various process parameters. A new leakage mechanism based on diffusion of an ionic entity produced by regenerative electrochemical reactions through percolating networks in the silicon dioxide is proposed.