The effect of nonequilibrium carrier distribution on supercontinuum broadband quantum-dash laser emission
lasers and electro-optics society meeting(2008)
摘要
We demonstrate the effect of nonequilibrium carrier distribution in a highly inhomogeneous quantum-dash-in-well laser. The electroluminescence spectra show the presence of localized photon reabsorption and lasing action from different quantum-dash ensembles at room temperature.
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关键词
gain,gallium arsenide,semiconductor lasers,room temperature,electroluminescence,temperature measurement,excited states
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