Oxygen-Inserted Segfet: A Candidate For 10-Nm Node System-On-Chip Applications

Nuo Xu,Hideki Takeuchi,Nattapol Damrongplasit,Robert J. Stephenson,Marek Hytha,Nyles Cody,Robert J. Mears,Tsu-Jae King Liu

2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)（2014）

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摘要

An oxygen-inserted quasi-planar segmented channel MOSFET design is proposed and studied for monolithic system-on-chip applications. Projections indicate that it will provide for higher performance than bulk FinFET technology at the 10 nm node, due to higher field-effect carrier mobility, lower source/drain series resistance, and the benefit of super-steep retrograde well punchthrough-stopper doping.

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关键词

oxygen-inserted SegFET,oxygen-inserted quasiplanar segmented channel MOSFET design,monolithic system-on-chip application,bulk FinFET technology,field-effect carrier mobility,source/drain series resistance,super-steep retrograde well punchthrough-stopper doping,size 10 nm

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