Analysis and Compact Modeling of MOSFET High-Frequency Noise

We have developed a high-frequency noise model for short channel MOSFETs by considering the position dependent surface potential which results in a non-uniform mobility distribution along the channel. The chosen approach successfully reproduces the induced-gate noise and the cross-correlation noise between drain and gate for short channel MOSFETs without additional model parameters. In particular, the gate noise characteristics at GHz frequencies are accurately captured. The newly developed high-frequency noise model is implemented in the complete surface-potential based MOSFET model HiSIM (Hiroshima-university STARC IGFET Model) for circuit simulation.