Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layerS Mclaughlin,N B Singh,Brian Wagner,A Berghmans,D J Knuteson,D Kahler,Anthony A Margarellamag(2010)引用 23|浏览4暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要