A Comparison of the Pattern Transfer of Line-Space Patterns from Graphoepitaxial and Chemoepitaxial Block Co-Polymer Directed Self-Assembly

Block co-polymer directed self-assembly (BCP DSA) has become an area of fervent research activity as a potential alternative or adjunct to EUV lithography or self-aligned pitch multiplication strategies. This presentation will evaluate two DSA strategies for patterning line-space arrays at 30nm pitch: graphoepitaxial DSA with surface-parallel cylinder BCPs and chemoepitaxial DSA with surface-normal lamellar BCPs. A comparison of pattern transfer into hard-mask and substrate films will be made by consideration of line and space CDs, line profile of cross-sectional SEM images, and comparison of relative LWR/SWR. The processes will be benchmarked against Micron's process used in manufacturing its 16nm half-pitch NAND part.