Multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array with record wide wavelength span

device research conference(2003)

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摘要
In this paper, we propose a growth pressure control during MOCVD growth of VCSEL wafers on a patterned substrate to avoid the mismatch between a grain peak and resonant mode. We demonstrate a multiple wavelength GaInAs/GaAs VCSEL array emitting in a new wavelength window of 0.9-1.2 /spl mu/m, exhibiting a record wavelength span of 192 nm.
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关键词
gallium arsenide,vertical cavity surface emitting laser,mocvd,surface waves,wavelength division multiplexing,resonance,chemical vapor deposition
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