3D vertical TaO x /TiO 2 RRAM with over 10 3 self-rectifying ratio and sub-μA operating current

The 3D double-layer vertical RRAM with ultralow sub-μA operating current and high self-rectifying ratio over 103 has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.