Reliability characterization of power devices which operate under power cycling

Daniel Simon,Cristian Boianceanu,Gilbert De Mey,Vasile Topa

2015 International Semiconductor Conference (CAS)（2015）

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摘要

The safe-operating-area (SOA) of automotive DMOS transistors, which are operated repeatedly under high power pulses (power cycling), is lower than the classical single-pulse SOA and it is dependent on the geometry of the transistor. In this paper, we present a test system for reliability characterization of power devices, of various geometries, which operate under power cycling conditions.

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关键词

power cycling,thermal cycling,thermal stress,reliability measurement,robustness,safe operating area

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