Laser Incorporation of Silicon into GaAs-AlGaAs Heterostructures

Recently, a laser-scanning technique for patterning Si-induced layer disordering of GaAs-AlGaAs heterostructures has been reported. This process, called laserassisted disordering (LAD), has been successfully used to fabricate low threshold buried heterostructure lasers. In this report, the LAD process is studied in detail with scanning electron microscopy, transmission electron microscopy and secondary ion mass spectrometry. The results are discussed in the context of device fabrication.