CLARIS G2: Development of Carbon Cluster Implantation

Yoshiki Nakashima,Nariaki Hamamoto,Sei Umisedo, Yasuki Koga,H Une,Hironori Asai,N Maehara, Yoshikazu Hashino,Yuichi Kawamura,Masahiro Hashimoto,Toshiki Nagayama,Masayasu Tanjyo,Hiroshi Onoda,Thomas N Horsky, Sami K Hahto,Karuppanan Sekar

AIP Conference Proceedings（2011）

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摘要

Nissin's boron and carbon cluster ion implanter CLARIS G2 has been developed for the mass production of next generation CMOS devices. Development of boron cluster implant technique was presented at last IIT conference in 2008 [1]. In this paper, development of carbon cluster (C16Hx+ and C7Hx+) implant technique is described. Carbon cluster implantation has been well productized in terms of throughput, beam quality and lifetime.

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关键词

Carbon,Cluster,Implanter,Shallow Junction,Equipment

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