Impact of Very Low Hf Concentration (Hf=6%) Cap Layer on Performance and Reliability Improvement of HfSiON -CMOSFET with EOT Scalable to 1nm

Motoyuki Sato,Yasushi Nakasaki,Koji Watanabe,Tomonori Aoyama,Eiji Hasegawa,Masato Koyama,Katsuyuki Sekine,Kazuhiro Eguchi,Masaki Saito,Yoshitaka Tsunashima

international electron devices meeting（2006）

引用 1|浏览9

暂无评分

摘要

The authors have demonstrated the stacked MOCVD HfSiON gate dielectrics with extremely low Hf concentration (Hf/(Hf+Si)=6%) cap (LHC) which realized improved mobility and superior long-term reliability of CMOSFETs while maintaining low gate leakage currents and EOT scalability to 1nm. These superior electrical characteristics of the film are mainly owing to the suppression of the Vo2+ formation in the LHC layer, which is evidenced by first principle calculation

查看译文

关键词

reliability,mocvd,leakage current,dielectric materials

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要