Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC

M Wzorek,A Czerwinski,M Borysiewicz,K Golaszewska,M Myśliwiec,J Ratajczak,A Piotrowska,J Kątcki

Materials Science and Engineering: B（2015）

引用 6|浏览17

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摘要

•Thin Ni–Si layers on SiC were studied after annealing.•Different types of microstructural defects occur depending on Ni:Si ratio.•Mechanisms leading to morphology degradation are discussed.•Presented method improves the microstructure of ohmic contacts to SiC.

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关键词

Ohmic contact,Silicon carbide,Nickel silicides,Microstructure,Diffusion barrier,Zirconium

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