Sb 52 Se 36 Te 12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application

Liangliang Chen,Sannian Song,Zhitang Song,Le Li,Zhonghua Zhang,Yonghui Zheng,Qianqian Zheng,Xin Zhang,Xiuwei Zhu,Hehong Shao

Applied Surface Science（2015）

引用 6|浏览9

暂无评分

摘要

The high crystallization temperature and data retention of Sb52Se36Te12 indicating better thermal stability than both Sb4Te and Ge2Sb2Te5. SET/RESET speed of 8ns was realized showing the fast switching speed. Brilliant data retention and fast switching speed make Sb52Se36Te12 a promising material for application in PCM.

查看译文

关键词

Phase change memory (PCM),Data retention,Crystallization speed,X-ray diffraction (XRD),Transmission electron microscopy (TEM)

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要