LSMO thin films with high metal–insulator transition temperature on buffered SOI substrates for uncooled microbolometers

S Chromik,V Strbik,E Dobrocka,Tomas Roch,A Rosova,M Spankova,T Lalinský,G Vanko,Peter Lobotka, M Ralbovský,P Choleva

Applied Surface Science（2014）

引用 37|浏览19

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摘要

•SOI substrate for uncooled bolometer.•LSMO thin films on Bi4Ti3O12/CeO2/YSZ/SOI substrate.•The highest resistivity of metal–insulator transition is at temperature TP above 400K.•TCR coefficient about 3.4%K−1 at 325K.•Rotation of Bi4Ti3O12 and LSMO films of 45° with regard to YSZ and SOI substrate.

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关键词

LSMO thin films,BTO/CeO2/YSZ buffered SOI substrate,Pulsed laser deposition,TCR coefficient

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