Giant Magnetoresistance in Magnetic Nanostructures and Spintronic Devices

L V Lutsev,A I Stognij,N N Novitskii,A S Shulenkov

Solid State Phenomena（2011）

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摘要

The injection magnetoresistance effect in SiO2(Co)/GaAs heterostructures, where SiO2(Co) is a granular SiO2 film containing Co nanoparticles, has been studied. This effect manifests itself in the avalanche breakdown mode and has extremely large values at room temperature due to the spin-dependent potential barrier. We consider application of the IMR effect and SiO2(Co)/GaAs heterostructures in spintronic devices high sensitive magnetic sensors and field-effect transistors governed by applied magnetic field.

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关键词

magnetoresistance,semiconductor / granular film heterostructures,cobalt nanoparticles,spin-dependent potential barrier,avalanche process,magnetic sensitive field-effect transistors,magnetic sensors

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