Electrical Properties in Lanthanides Substituted (bi0.9a0.1)(fe0.975co0.025)o3−δ (A = La, Eu, Gd) Thin Films

Multiferroic BFO and (Bi0.9A0.1)(Fe0.975Co0.025)O3−δ (A = La, Eu, Gd) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere. Reduced leakage current density and improved ferroelectric properties were observed in the co-doped thin films compared to the BFO thin film. The enhanced properties observed in the co-doped thin films could be considered as being the result of the suppression of oxygen vacancies and of the modified microstructure.