Investigation of the magnetic anisotropy in ferromagnetic GaMnAs films by using the planar hall effect

Journal of the Korean Physical Society(2013)

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摘要
The magnetic anisotropy properties of GaMnAs ferromagnetic films have been investigated by using planar Hall effect measurements. The field scan of the planar Hall resistance (PHR) showed a two-step switching behavior indicating a strong cubic anisotropy along the 〈100〉 directions. The difference in the behaviors of the PHR for two applied field directions, [ 11̅0] and [110], was understood via the well-known uniaxial anisotropy along the [110] direction. In addition to such known effects, we also found the presence of an asymmetry for the [010] and the [100] directions. This new asymmetry phenomenon was explained by introducing an additional uniaxial anisotropy field H u 2 along the [100] and the [ 1̅00] directions, which coincide with the two directions of cubic anisotropy. The values of the anisotropy fields, cubic ( H c ), first uniaxial ( H u 1 ), and second uniaxial ( H u 2 ), were obtained by analyzing the angle dependence of the PHR. Although the value of H u 2 is small, its effect is clearly observed at high temperatures above 25 K, where the transition of the magnetization occurred before the field direction had been reversed during the magnetization reversal process.
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关键词
Ferromagnetic semiconductor, Magnetic anisotropy, Planar Hall effect
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