Corrigendum to ‘Light enhancement of surface nano-textured GaN based light emitting diodes using self-assembled Ni nano-masks’ Optik 127 (2016) 1622–1626

Light enhancement of GaN based light emitting diodes (LEDs) has been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental result was further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), surface nano-porous (porous LED) and surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.