15 Kv, Large Area (1 Cm(2)), 4h-Sic P-Type Gate Turn-Off Thyristors

In this paper, we report our recently developed 1 cm(2), 15 kV SiC p-GTO with an extremely low differential on-resistance (R-ON,R-diff) of 4.08 m Omega.cm(2) at a high injection-current density (J(AK)) of 600 similar to 710 A/cm(2). The 15 kV SiC p-GTO was built on a 120 mu m, 2x10(14)/cm(3) doped p-type SiC drift layer with a device active area of 0.521 cm(2). Forward conduction of the 15 kV SiC p-GTO was characterized at 20 degrees C and 200 degrees C. Over this temperature range, the R-ON,R-diff at J(AK) of 600 similar to 710 A/cm(2) decreased from 4.08 m Omega.cm(2) at 20 degrees C to 3.45 m Omega.cm(2) at J(AK) of 600 similar to 680 A/cm(2) at 200 degrees C. The gate to cathode blocking voltage (V-GK) was measured using a customized high-voltage test setup. The leakage current at a V-GK of 15 kV were measured 0.25 mu A and 0.41 mu A at 20 degrees C and 200 degrees C respectively.