Morphological Characterization of UNCD on Etched Silicon

We have proposed the growth of ultrananocrystalline diamond (UNCD) thin films on p-type (100) silicon etched with 27wt. % KOH in H2O. To get homogeneous distribution of micro pyramids on the silicon surface we have varied temperature (62 to 77 degrees C), etching time (1 to 35 min) and exposition diameter area (5 to 18 mm). For UNCD growth we have used hot filament chemical vapor deposition (HFCVD). The gas mixture have used 1 vol.% methane, 9 vol.% hydrogen and 90 vol.% argon, with the total flow rate of 200 sccm, at work pressure of 30 Torr. Images of Scanning Electron Microscopy (SEM) showed UNCD covered the silicon surface following the micro pyramidal morphology. Raman spectra (514.5 nm) showed all feature bands of UNCD such as: transpolyacethylene (1150 cm(-1)) and graphite (1350-1575 cm(-1)). The X-ray diffraction confirmed Raman spectroscopy. These results showed the silicon micro pyramidal structures obtained at 20 min, 75 degrees C and 10 mm exposition diameter area as the more satisfactory for UNCD growth.