Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS

M Wzorek,A Czerwinski,J Ratajczak,M Borysiewicz,A V Kuchuk,A Piotrowska,J Kątcki

Materials Science Forum（2014）

引用 5|浏览14

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摘要

Distribution of chemical composition in nickel-based ohmic contacts to n-type 4H-SiC was investigated with XEDS mapping performed on plan view and cross-sectional TEM samples. Obtained results indicate that local deviations in stoichiometry from that of Ni2Si phase significantly contribute to degradation of surface morphology.

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关键词

silicon carbide,ohmic contacts,nickel,silicon,TEM,SEM,XEDS

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