Using Intrinsic Defect Spectra in 4H SiC As Imbedded Thermometers in the Temperature Range from 100°C to 1500°C
Materials science forum(2011)
摘要
Low doped epitaxial films of 4H SiC irradiated at 1 MeV and electron fluences of 1×1015 cm-2, 3×1015 cm-2 and 1×1016 cm-2 have been used to measure temperatures in two temperature intervals: 580°C to 640°C and 1220°C to 1320°C. Possible accuracy of the temperature measurements is judged to be better than 10 degrees Centigrade. Similar measurements should be possible from 100°C to 1500°C.
更多查看译文
关键词
Interface Temperature,Intrinsic Defect Spectra,Electron Irradiation,Thin Films,Graphene
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要