High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology

The one-time programmable (OTP) cell with intra-Fin-cell-isolation (IFCI) on the FinFET high-k metal gate (HKMG) CMOS process is proposed and demonstrated. The field-enhanced dielectric breakdown at Fin corners enables this OTP cell to be operated at low program voltage with fast program speed. The new intra-Fin cell-to-cell isolation eliminates the required wide spacing in the conventional isolat...