Comparative Study of High- $k/{\rm GaSb}$ Interfaces for Use in Antimonide Based MOSFETs

Krishna Kumar Bhuwalka,Shih Wei Wang,O C Noriega,M C Holland,R Contrerasguerrero,M Edirisooriya,G Doornbos,Chienhsun Wang,T H Myers,R Droopad,Matthias Passlack,Carlos H Diaz

IEEE Electron Device Letters（2014）

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摘要

Electrical interface quality of various high- k dielectrics on GaSb, including Al2O3, HfO2, LaAlO3, GdScO3, and HfO2/Ga2O3 bilayer has been studied and compared with reference low (AlGaSb) and high Dit (native oxide) interfaces using photoluminescence intensity measurements for the first time. Al2O3 and HfO2/Ga2O3 bilayer dielectrics are identified with the lowest interface recombination velocity ...

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关键词

High K dielectric materials,Photonic band gap,Dielectrics,Semiconductor device measurement,MOSFET,Aluminum oxide,Radiative recombination

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