A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices

Ramachandran Muralidhar,Jin Cai,Isaac Lauer,K Chan,Pranita Kulkarni,Younghee Kim,Z Ren,Daegyu Park,Phil Oldiges,Ghavam G Shahidi

IEEE Electron Device Letters（2012）

引用 6|浏览50

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摘要

The short-channel effects (SCEs) of planar bulk and fully depleted finFET devices have been compared using the same junction overlap and lateral gradient, and it is shown that, for finFET devices, a significant component of electrostatic control arises from a naturally present shallow extension junction. When such shallow junctions are applied to a bulk device, we show that the SCE becomes compara...

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Logic gates,Junctions,Doping,Electrostatics,Performance evaluation,Silicon,Semiconductor process modeling

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