Low-Temperature Ohmic Contact Formation in GaN High Electron Mobility Transistors Using Microwave Annealing
IEEE Electron Device Letters(2015)
摘要
In this letter, a low-temperature microwave annealing (MWA) method is first reported for the formation of ohmic contact to AlGaN/GaN high electron mobility transistors (HEMTs). Compared with the traditional GaN devices annealed by rapid thermal annealing (RTA), MWA-HEMTs can achieve a low ohmic contact resistance with much smoother surface of ohmic contacts. The spike mechanism is observed in our ...
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关键词
Ohmic contacts,Surface morphology,Gallium nitride,Annealing,Aluminum gallium nitride,Wide band gap semiconductors
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