Kinetics of shift of individual interfaces in Ni/Si system during low temperature reactions

S S Shenouda,Gabor Molnar,G A Langer,G L Katona,F Kristaly,D L Beke

Microelectronic Engineering（2015）

引用 4|浏览2

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摘要

Shrinkage of Ni (X) and Si (Y) versus the annealing time at 453K reveals the parabolic kinetics in all cases; shrinkage of a-Si is faster than that of c-Si due to the high diffusivity of Ni in a-Si.

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关键词

Shift of individual interfaces,Thin films,Nano-scale

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