Defect Analysis of Pentacene Diode

This paper demonstrates the analysis of defect states in pentacene film sandwiched between Au and Al electrodes by the deep-level transient spectroscopy method. Three hole-like deep energy levels were observed. The effective mass obtained from the simulation is applied and defect parameters, namely the capture cross-sections and the activation energy 3.7 x 10(-18) cm(2) at 0.34 eV, 3.1 x 10(-17) cm(2) at 0.41 eV, and 2.9 x 10(-15) cm(2) at 0.63 eV is determined from the Arrhenius plot. Reliability of obtained defect parameters is confirmed by simulation of deep level transient spectra and comparison with experiment.