Epitaxial lateral overgrowth on the air void embedded SiO2 mask for InGaN light-emitting diodes

We fabricated InxGa1-xN multiple quantum well (MQW) light-emitting diodes (LEDs) on an air void embedded SiO2 mask using a simple process (silver (Ag) deposition, SiO2 capping, and high-temperature annealing). Ag was volatilized in the MOCVD process and formed an air void, as revealed by energy dispersive X-ray spectroscopy images. The light output power (at 20 mA) of the LED using epitaxial lateral overgrowth on the SiO2 mask (47.8%) and LED with the air void embedded SiO2 mask (96.8%) are enhanced compared to conventional LEDs. From reflectance measurements, the enhancement of LEDs with an air void embedded SiO2 mask could be mainly explained by the increased high incident angle specular reflectance.