Electron beam pumped Zn(Cd)Se/ZnMgSSe quantum well semiconductor disk laser

We report pulsed 465-nm lasing in a longitudinally electron beam pumped Zn(Cd)Se/ZnMgSSe heterostructure with 30 quantum wells, grown by metalorganic vapour phase epitaxy. At an external spherical mirror radius of 30 mm, 3% transmission of the mirror, and an electron energy of 42 keV, the peak laser output power reached 1.4 W. The pulse duration was 20-40 ns, the emission linewidth was within 0.3 nm, and the beam divergence was about 4-5 mrad, approaching the diffraction limit.